HBM3E at a Glance – SK hynix vs Samsung vs Micron (2025)
High-bandwidth memory (HBM) is a 3D memory that stacks multiple layers of DRAM chips vertically and interconnects them with through-silicon vias (TSVS). It directly "stacks" the memory beside the processor, with an extremely wide interface and lower power consumption. A single chip can provide a data bandwidth of over 1-2 TB/s, serving as the "cache" for AI accelerator cards, high-end Gpus, and data center chips.
| Spec | SK hynix HBM3E | Samsung HBM3E | Micron HBM3E |
| Pin speed | 9.2 Gb/s | 9.2 Gb/s | 8.5 Gb/s |
| Stack bandwidth | 1.15–1.2 TB/s | 1.07 TB/s | 1.0 TB/s |
| Capacity per stack | 16 GB (8-Hi) / 24 GB (12-Hi) | 16 GB (8-Hi) / 24 GB (12-Hi) | 16 GB (8-Hi) / 24 GB (12-Hi) |
| Power efficiency vs HBM3 | –10 % | –8 % | –8 % |
| Mass-production start | Q3-2023 | Q1-2024 | Q2-2024 |
| Thermal package | Advanced TSV + MR-MUF | NCF (non-conductive film) | Standard copper TSV |
| Customer design-ins | NVIDIA H200, AMD MI325X | NVIDIA H200 (qualifying) | NVIDIA Blackwell Ultra, custom AI cards |
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