Vincotech 10-EY122PA008ME01-LU38F06T SiC MOSFET Power Module | flowDUAL E2 SiC 1200V 200A

2026-05-15 10:24:06 CORE View times 83

　　The Vincotech 10-EY122PA008ME01-LU38F06T is a high-performance 1200V SiC MOSFET power module from the flowDUAL E2 SiC product family. Designed for high-efficiency industrial and EV charging applications, this half-bridge module combines advanced Silicon Carbide (SiC) technology with a compact flow E2 housing to deliver excellent switching performance, low conduction loss, and superior thermal reliability.

Vincotech 10-EY122PA008ME01-LU38F06T SiC MOSFET Power Module Vincotech flowDUAL E2 SiC 1200V 200A

　　Key Features of 10-EY122PA008ME01-LU38F06T

　　·1200V breakdown voltage

　　·200A nominal current rating

　　·Half-Bridge topology with integrated temperature sensor

　　·Advanced SiC MOSFET switching technology

　　·AlN ceramic substrate for enhanced thermal conductivity

　　·Press-fit pin interconnection

　　·Compact flow E2 package (62.8 mm × 57.7 mm)

　　·12 mm low-profile housing

　　·High-speed switching with low switching losses

　　·Excellent thermal cycling capability

　　·Resistant to latch-up effects

　　The module is optimized for high-power-density applications requiring maximum efficiency and reliability.

　　Technical Specifications

Parameter	Specification
Part Number	10-EY122PA008ME01-LU38F06T
Product Line	flowDUAL E2 SiC
Topology	Half-Bridge
Semiconductor Technology	SiC MOSFET
Breakdown Voltage	1200 V
Nominal Current	200 A
Housing Family	flow E2
Isolation Material	AlN
Package Height	12 mm
Electrical Connection	Press-fit Pin
Footprint	62.8 mm × 57.7 mm
Product Status	Samples Available

　　Typical Applications

　　The Vincotech flowDUAL E2 SiC series is widely used in:

　　DC fast charging stations

　　EV onboard chargers

　　Solar inverters

　　Energy storage systems (ESS)

　　Industrial motor drives

　　Welding equipment

　　High-efficiency power supplies

　　Smart grid infrastructure

　　Vincotech specifically highlights this platform for high-power EV charging solutions and next-generation energy systems.

　　Related flowDUAL E2 SiC Models and Parameters

　　The following related models belong to the same Vincotech flowDUAL E2 SiC platform shown in the product portfolio image:

Part Number	Topology	Voltage	Current	Technology	Housing	Isolation
10-EY122PA005ME-LU39F08T	Half-Bridge-NTC	1200V	300A	SiC MOSFET	flow E2	Al₂O₃
10-EY122PA004ME-LU39F18T	Half-Bridge-NTC	1200V	330A	SiC MOSFET	flow E2	Al₂O₃
10-EY122PA007MS-LU38F78T	Half-Bridge-NTC	1200V	220A	SiC MOSFET	flow E2	Al₂O₃
10-EY122PA009MR-LU37F48T	Half-Bridge-NTC	1200V	140A	SiC MOSFET	flow E2	Al₂O₃
10-EY122PA010MS-LU37F78T	Half-Bridge-NTC	1200V	140A	SiC MOSFET	flow E2	Al₂O₃
10-EY232PB008ME01-PN97F08T	Half-Bridge-E2 SiC	2300V	200A	SiC MOSFET	flow E2	AlN
10-EY122PA006MR-LU39F48T	Half-Bridge-NTC	1200V	210A	SiC MOSFET	flow E2	Al₂O₃
10-EY122PA005MS-LU39F78T	Half-Bridge-NTC	1200V	290A	SiC MOSFET	flow E2	Al₂O₃
10-EY122PA008ME-LU38F08T	Half-Bridge-NTC	1200V	200A	SiC MOSFET	flow E2	Al₂O₃
10-EY122PA008ME01-LU38F06T	Half-Bridge-NTC	1200V	200A	SiC MOSFET	flow E2	AlN
10-EY122PA009ME-LU37F18T	Half-Bridge-NTC	1200V	165A	SiC MOSFET	flow E2	Al₂O₃
10-EY128PA018MR02-PN19F03T	4xHalf Bridge-KE-NTC	1200V	130A	SiC MOSFET	flow E2	Al₂O₃
10-EY12SAA003MS-PT49F78T	Half-Bridge-NTC	1200V	510A	SiC MOSFET	flow E2	Al₂O₃
10-EY232PB005ME01-PN99F08T	Half-Bridge-NTC	2300V	300A	SiC MOSFET	flow E2	AlN

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