Home > technical > UMS CHA8610-99F 15W X-Band High Power Amplifier | GaN MMIC RF Power Amplifier

UMS CHA8610-99F 15W X-Band High Power Amplifier | GaN MMIC RF Power Amplifier

2026-06-01 09:43:06 CORE View times 43

  CHA8610-99F is a high-power GaN Monolithic Microwave Integrated Circuit (MMIC) developed by UMS (United Monolithic Semiconductors). Designed for X-band applications, the amplifier operates from 8.5 GHz to 11 GHz and delivers up to 15W saturated output power with excellent efficiency, making it suitable for radar, defense, satellite communications, electronic warfare, and high-performance microwave systems.

UMS CHA8610-99F 15W X-Band GaN High Power Amplifier

  Key Features

  Frequency Range: 8.5 GHz – 11 GHz

  Saturated Output Power: 15W Typical

  Power Added Efficiency (PAE): 40% Typical

  Linear Gain: 24 dB Typical

  Drain Bias: 30V @ 0.68A

  Technology: GaN pHEMT Process

  Gate Length: 0.25 μm

  Chip Size: 5.08 × 2.75 × 0.1 mm

  Available as Bare Die for hybrid and custom module integration

  Typical Applications

  Military Radar Systems

  The CHA8610-99F is optimized for X-band radar transmitters requiring high output power and efficiency.

  Satellite Communications

  Suitable for high-frequency uplink systems where compact size and high gain are critical.

  Electronic Warfare (EW)

  Its wide operating bandwidth and robust GaN technology make it ideal for EW and jamming equipment.

  Commercial Microwave Communications

  Can be integrated into point-to-point microwave links and advanced RF front-end architectures.

CORE is authorized to distribute UMS microwaves. We offer high-quality stock of certain models of UMS products. Welcome to inquire.

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