UMS GaN Power Amplifiers | HPA MMIC for SATCOM, 5G and Radar
UMS GaN power amplifiers are designed for demanding RF and microwave applications where high output power, high efficiency and compact MMIC integration are required. Based on advanced GaN and GaN-on-SiC technologies, UMS high power amplifier products are widely used in satellite communications, 5G infrastructure, radar, defense systems, aerospace platforms and high-frequency test equipment.
As RF systems continue to move toward higher frequency bands such as Ku-band, Ka-band and Q-band, engineers need amplifier solutions that can deliver stable gain, strong saturated output power and reliable performance in compact module designs. UMS provides a broad HPA portfolio covering multiple frequency ranges, making it a strong choice for high-performance transmitter chains.
Related UMS GaN Power Amplifier Models and Key Specifications
| Model | Frequency Range | Output Power | Gain | PAE | Bias | Package / Case | Typical Applications |
| CHA8107-QCB | 4.5–6.8GHz | 41dBm / up to 8–20W depending on drain voltage | 28dB | 62% listed / about 58% average | 18V / 315mA | QFN | Radar, aerospace, defense, microwave systems |
| CHA7060-QAB | 5.6–8.5GHz | 41dBm / 12W | 30dB | 40% @ 41dBm Pout | 20V / 420mA | QFN | Point-to-point radio, RF transmit systems |
| CHA8618-99F | 6–18GHz | 42.5dBm | 33dB | 26% @ Psat | 20V / 1200mA | Die | Electronic warfare, military systems, test instrumentation |
| CHA8154-99F | 7.25–7.75GHz | 42.6dBm / 18W | 28.5dB | 49% | 28V / 330mA | Die | Radar, space communication, telecom |
| CHA8710-QDB | 8.5–10.5GHz | 44dBm / 25W | 29.5dB | 41% @ Psat | 30V / 750mA | QFN | Defense, commercial communication, radar systems |
| CHA7250-QAB | 10–12.75GHz | 40dBm / 10W | 20dB | 37% @ 40dBm | 20V / 130mA | QFN | Point-to-point radio, Ku-band RF systems |
| CHA8315-99F | 15–18GHz | 45dBm listed; 43.5dBm typical output described | 23dB | 47% listed; 45% typical described | 20V / 1160mA | Die | Defense, Ku-band systems, microwave applications |
| CHA6262-99F | 17.3–21.5GHz | 36dBm / 4W | 30dB | 36% @ Psat | 18V / 260mA listed | Die | Space applications, microwave systems |
| CHA6282-QCB | 17.3–21.5GHz | 36dBm / 4W | 30dB | 28% @ Psat | 18V / 260mA | QFN | Space applications, aerospace, defense, microwave systems |
| CHA8254-99F | 17.3–20.3GHz | 40dBm / 10W | 29dB | 31%; 27% at 6dB input back-off | 15V / 210mA listed | Die | Space applications, high-performance microwave systems |
| CHA8262-99F | 27.5–31.5GHz | 41dBm / 12W | 24dB | 25% | 20V / 280mA | Die | SATCOM uplink, 5G communication |
| CHA7362-QWA | 27.5–31GHz | 39dBm / 8W | 26dB | 27% @ Psat | 20V / 280mA | QFN | Satellite communications, 5G infrastructure |
| CHA8282-99F | 27.5–31GHz | 10W | 27dB | 33% | 22V / 300mA | Die | SATCOM, microwave and millimeter-wave systems |
| CHA8362-99F | 26.5–31GHz | 25W saturated output power | 25dB | 30% | 25V / 440mA | Die | SATCOM, 5G, Ka-band microwave systems |
| CHA8454-99F | 37.5–43.5GHz | 40.5dBm / 10W | 24dB | 25% listed; more than 24% typical described | 20V / 540mA | Die | Space, military, telecom, Q-band systems |
Why Choose UMS GaN Power Amplifiers
UMS has strong expertise in RF, microwave and millimeter-wave semiconductor design. Its GaN power amplifier portfolio covers multiple frequency bands, package formats and output power levels, allowing engineers to select suitable HPA solutions for commercial, aerospace, defense, telecom and SATCOM applications.
Looking for UMS GaN power amplifiers or suitable HPA models for your RF project? Contact us today to request datasheets, check stock availability, compare model specifications and get technical support for UMS RF amplifier selection.CORE is authorized to distribute UMS microwaves. We offer high-quality stock of certain models of UMS products. Welcome to inquire.
