The Ampleon CLL3H0914L-700 and CLL3H0914LS-700 are 700W internally pre-matched RF GaN-SiC HEMT power transistors from Ampleon, designed for use in the 0.9 GHz to 1.4 GHz frequency range. These devices offer outstanding efficiency, thermal resistance, and ruggedness, making them suitable for a variety of applications.

　　Performance Parameters

　　Frequency Range: 0.9 GHz to 1.4 GHz

　　Output Power: 850 W at 1200 MHz, 750 W at 1300 MHz, and 750 W at 1400 MHz

　　Power Gain: 16.0 dB at the above frequencies

　　Drain Efficiency: 62% at 1200 MHz, 71% at 1300 MHz, and 68% at 1400 MHz

　　Input Return Loss: -12 dB at 1200 MHz, -16 dB at 1300 MHz, and -15 dB at 1400 MHz

　　Thermal Resistance: Transient thermal resistance from the active chip channel to the case varies from 0.12 K/W to 0.24 K/W under different conditions

　　Drain-Source Voltage: Maximum 150V

　　Gate-Source Voltage: -8V to 2V

　　Forward Gate Current: 36mA

　　Storage Temperature: -65℃ to +150℃

　　Applications

　　Avionics Applications: Suitable for efficient short-pulse reference designs at 960 MHz to 1,215 MHz and 1,030 MHz, as well as efficient long-pulse reference designs from 1.2 GHz to 1.4 GHz

　　Short-Pulse and Long-Pulse Applications: Capable of withstanding VDS = 50 V; f = 1,300 MHz, rated load power on the RF development board using pulsed CW RF signals

　　Advantages

　　Low Thermal Resistance: Enhances the device's heat dissipation performance and reliability

　　Excellent Ruggedness: Can withstand load mismatches corresponding to VSWR = 10:1 under the conditions of VDS = 50 V; f = 1,300 MHz, rated load power on the RF development board using pulsed CW RF signals

　　RoHS Compliance: Meets environmental standards for modern electronic devices

　　Recommended Drivers

　　CLF3H0060-30 for CLL3H0914L-700

　　CLF3H0060S-30 for CLL3H0914LS-700

Ampleon is a leading global provider of RF and power semiconductor solutions. CORE offer Ampleon’parts,If you need to know more about or purchase the product, you can consult CORE customer service or fill out the RFQ.