The CREE/Wolfspeed CMPA1D1E025F is a high-power Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) power amplifier. Specifically designed for Ku-band (13.75–14.5 GHz) operations, it is fabricated using a 0.25m gate-length High-Electron-Mobility Transistor (HEMT) process on Silicon Carbide (SiC) substrates.

　　This device is ideal for satellite communication (Satcom) uplink systems and radar, offering high power density with a saturated output power of 25 W.

　　Key Performance Parameters

　　Technical Characteristics

　　·Linearity: ACLR ≤ -30 dBc (at 1.6 MHz offset) for OQPSK-modulated signals.

　　·Ruggedness: Capable of withstanding a 5:1 VSWR mismatch under all phase conditions.

　　·Thermal Management: Low thermal resistance (1.5 °C/W junction-to-case) for enhanced reliability.

　　·DC Specs: Gate Threshold Voltage (V_Gs(th)) of 一3.4 V to -2.6 V.

　　Typical Applications

　　·Satellite Communication Systems: A solid-state alternative to Traveling-Wave Tubes (TWTs).

　　·Ku-Band Uplink Transmission: Optimized for 13.75–14.5 GHz.

　　·Radar & Electronic Countermeasure (ECM): High-reliability military and defense systems.

　　·5G Millimeter-Wave: Infrastructure and extended application scenarios.

　　Ku-Band GaN RF Power Amplifier Selection Guide

If you are comparing models, here are related Wolfspeed GaN PA options:

Products	Min Frequency(MHz)	Max Frequency(MHz)	Peak Output Power(W)	Gain(dB)	Efficiency(%)	Operating Voltage(V)	Package Category
CMPA1E1F060T	13750	15500		31			Die
CMPA1C1D060D	12700	13250	65	26	30	40	Die
CMPA1D1E025	13500	14500	25	26	16	40	Flange
CMPA1D1E030	13750	14500	30	26	25	40	Die
CMPA1D1J001	12700	18000	1	23	30	28	Surface Mount
CMPA1E1F060	13400	15500	60			28	Flange, Die
CMPA1F1H060	15400	17700	30	26	25	40	Die
CMPA601C025	6000	12000	40	25	32	28	Flange, Die
CMPA601J025	6000	18000	25	30	27	22	Flange, Die

If you need to know more about and purchase CREE/Wolfspeed products, you can consult CORE customer service or fill out the RFQ.