Home > technical > Ampleon C4H27F700AV: 700W GaN Doherty Transistor for 2.5–2.7GHz 5G Base Stations

Ampleon C4H27F700AV: 700W GaN Doherty Transistor for 2.5–2.7GHz 5G Base Stations

2025-12-11 10:52:42 CORE View times 167

  The Ampleon C4H27F700AV is a 700 W, GaN-on-SiC high-electron-mobility transistor (HEMT) packaged as an asymmetric Doherty power transistor, designed specifically for macro-cell base-station power amplifiers operating from 2496 MHz to 2690 MHz. Key features include:

Ampleon C4H27F700AV

  Frequency range: 2496 – 2690 MHz

  Peak output power: 700 W (58.45 dBm) at 5 dB gain compression

  Power gain: ≈ 15 dB

  Drain efficiency: 50.2 %

  Supply voltage: 52 V

  Quiescent drain current: 250 mA

  Adjacent-channel power ratio (ACPR): –25.5 dBc (1-carrier W-CDMA test signal)

  Package: earless-flange ceramic SOT1249B, 24.28 × 15.60 × 4.10 mm

Ampleon is a leading global provider of RF and power semiconductor solutions. CORE offer Ampleon’parts,If you need to know more about or purchase the product, you can consult CORE customer service or fill out the RFQ.

WhatsApp

WhatsApp

Email

Email

RFQ

RFQ

Facebook

Facebook