The H5WRAGESM8W-N8L is a high-bandwidth memory (HBM2E) chip produced by SK Hynix. Here are its main parameters and features:

　　Basic Parameters

　　Capacity: 16GB.

　　Memory Type: HBM2E.

　　Bandwidth: 460GB/s.

　　Package Type: 3D stacked TSV (Through Silicon Via).

　　Voltage: 1.3V.

　　Operating Temperature Range: -40°C to +85°C.

　　Interface: Wide I/O interface.

　　Manufacturing Process: Based on SK Hynix's advanced DRAM technology.

　　Speed: 3.6Gbps.

　　KGSD Density: 128Gb.

　　Package: 8Hi

　　Features

　　High Capacity and High Bandwidth: Utilizing the 3D stacked TSV technology, multiple DRAM chips are vertically connected. This achieves high capacity and high bandwidth in a very small physical space, significantly reducing memory access latency and improving energy efficiency.

　　Low Voltage Design: The 1.3V low voltage design not only reduces power consumption but also enhances the thermal stability of the chip under high load.

　　High Reliability and Stability: Suitable for industrial and enterprise-level applications, with a wide operating temperature range. It supports advanced error correction, refresh management, and data integrity check functions, further enhancing system stability and data reliability.

　　Wide I/O Interface Design: It can be directly interconnected with GPUs or FPGAs and other main control chips through an interposer, reducing the complexity of PCB wiring and improving signal integrity and system integration.

　　Application Fields

　　It is widely used in high-performance computing (HPC), graphics processing units (GPUs), AI accelerators, and high-end graphics cards, meeting the demand for extremely high memory bandwidth and compact packaging.

Other related HBM2E models：

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