Onsemi NCS025M3E120NF06X 1200V SiC MOSFET for High-power application
Onsemi proudly introduces the 3rd Generation EliteSiC™ Silicon Carbide (SiC) MOSFET in bare die format, engineered for high-power systems such as:
·EV Traction Inverters
·High-Voltage DC-DC Converters
·Off-Board Chargers
| Product | Blocking Voltage BVDSS (V) | ID(max) (A) | RDS(on) Typ @ 25°C (mΩ) | Qg Total (nC) | Output Capacitance (pF) | Tj Max (°C) |
| NCS025M3E120NF068-09 | 1200 | 150 | 11 | 204 | 221 | 175 |
| NCS025M3E120NT066-09 | 1200 | 150 | 11 | 204 | 221 | 175 |
Leveraging cutting-edge M3e technology, this family delivers ultra-low on-resistance (RDS(on)) and optimized metalization for diverse packaging methods (soldering, sintering, wire/ribbon bonding, die-top copper). This flexibility reduces system size/weight while boosting power density and efficiency in electric vehicle (EV) drivetrains.
Key Advantages
·5% Efficiency Gain: Replacing silicon with SiC improves EV inverter efficiency, extending range.
·Robust Performance:
1200V blocking voltage for high-power demands.
Low conduction losses across temperature ranges.
·Packaging Versatility: Compatible with advanced assembly techniques to streamline design.
Applications
Main Traction Inverters (BEVs/HEVs)
HV DC-DC Conversion (800V+ systems)
Fast Charging Infrastructure (Off-board chargers)
Features
3rd Gen SiC MOSFET Technology
1200V High Voltage Rating
Thermally Stable RDS(on)
Bare Die Format for custom integration
CORE Advantage offers Onsemi's MOSFETs, AC-DC/DC-DC power converter modules and silicon carbide (SiC) products. Welcome to inquire and learn more.
