Onsemi's EliteSiC portfolio delivers advanced power semiconductor solutions engineered specifically for industrial and energy applications. This comprehensive lineup features:

　　· EliteSiC Diodes

　　· EliteSiC MOSFETs

　　· EliteSiC Hybrid Modules

　     · EliteSiC Full Modules

EliteSiC Diodes	EliteSiC MOSFETs	EliteSiC Hybrid Modules	EliteSiC Full Modules
650 V/1200 V/1700V	650 V/900 V/1200 V/1700V	650 V/1000 V/1200 V/1700V	900 V/1200 V
High efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost	High efficiency,faster operating frequency,increased power density,reduced EMI,and reduced system size and cost	Improved efficiency with SiC diodes &fastswitching low VCE (SAT)IGBT	Lower conduction and switching losses,while enabling designers to achieve high efficiency and superior reliability
· No reverse QRR recovery, No forward recovery · Low VF (lower conduction losses) · Leakage stability over temperature range ·Switching characteristics independent of temperature · Higher surge and avalanche capacity ·Positive temperature coefficient · Higher operating temperature (TJMAX=1750C) ·Multiple packages available - DPAK-3/TO-252-3LD - D2PAK-2/TO-263-2LD -D2PAK-3/TO-263-2LD - PQFN-4 - TO-220-2LD - TO-220-3LD - TO-220FP/TO-220F-2FS - TO-247-2LD - TO-247-3LD	·High power density ·Ultra-low gate charge ·Low effective output capacitance ·Low VF (lower conduction losses) ·Leakage stability over temperature range ·100% UIL tested ·Higher operating temperature (TJMAX=175°C) ·Multiple packages available - D2PAK7(TO-263-7L HV) - TO-247-3LD - TO-247-4	·Range of pin compatible SiC hybrid and full SiC options ·Integrated bypass diodes ·Low thermal impedance baseplate ·Split T-type NPC inverter ·I-Type NPC 1000 V,350 A/450 A IGBT, 1200 V,100 A SiC diode ·3 Channel Symmetric Boost 10o0 V,150 A IGBT,1200 V,30 A SiC diode ·3 Channel 1200 VIGBT + SiC Boost,80 A ·IGBT and 2O A SiC diode ·F1 and F2 modules available	·Low thermal resistance from larger die than with trench MOSFETs ·Easy to drive with negative gate voltages ·Industry standard pinout with same pinout  for differentRpsolevelsandvoltages ·Industry standard pinout option ·Reduced voltage ringing from using capacitors integrated into the module (F2 module) ·QO and Q1 Boost modules available

　CORE Advantage offers Onsemi's MOSFETs, AC-DC/DC-DC power converter modules and silicon carbide (SiC) products. Welcome to inquire and learn more.