Onsemi NXH020F120MNF1 Silicon Carbide (SiC) Power Module
Onsemi NXH020F120MNF1 is a high-performance SiC MOSFET power module developed by onsemi, optimized for high-efficiency, high-power-density, and high-temperature applications. Featuring a 4-PACK full-bridge topology, it is designed for high-voltage, high-frequency power conversion systems such as solar inverters, EV chargers, and industrial power supplies.
Key Features
✔ 1200V / 20mΩ SiC MOSFETs
✔ Press-Fit Pin Technology
✔ Integrated NTC Thermistor
✔ Optional Pre-Applied Thermal Interface Material (TIM)
✔ Fast Switching & Low Reverse Recovery
Target Applications
Solar Energy: PV inverters, microinverters
Electric Vehicles (EV): Fast chargers, on-board chargers (OBC)
Industrial Power Supplies: Motor drives, server PSUs, UPS systems
Energy Storage Systems (ESS): Bidirectional DC-DC converters
Performance Comparison
| Parameter | SiC (NXH020F120MNF1) | Traditional Si IGBT |
| Voltage Rating | 1200V | 600–1200V |
| RDS(on) @25°C | 20mΩ | 50–100mΩ |
| Switching Speed | Nanosecond-level | Microsecond-level |
| Max Junction Temp | 175°C | 150°C (typical) |
| System Efficiency | >98% (typical) | 95–97% |
Ordering Information
| Model | TIM Option | Package | Use Case |
| NXH020F120MNF1PTG | Pre-applied TIM | 28 units/tray | High-thermal-demand systems |
| NXH020F120MNF1PG | No TIM | 28 units/tray | Custom thermal solutions |
CORE Advantage offers Onsemi's MOSFETs, AC-DC/DC-DC power converter modules and silicon carbide (SiC) products. Welcome to inquire and learn more.
