The CREE/Wolfspeed CMPA601C025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) designed for operation in the 6.0–12.0 GHz frequency range. Fabricated on a silicon carbide (SiC) substrate using a 0.25 μm gate process, this device delivers high output power of 25 W, high power-added efficiency (PAE) of up to 36%, and excellent linearity, making it well suited for demanding applications in radar, electronic warfare, and satellite communication systems.

　　Key Performance Parameters

　　Frequency Range: 6.0–12.0 GHz

　　Output Power: 25 W (into a 50 Ω load)

　　Gain: Small-signal gain of 28–31 dB from 6 to 10.5 GHz, and 25–28 dB from 10.5 to 12 GHz

　　Efficiency: PAE ranging from 23% to 33.2% at 6 GHz, 26% to 32.3% at 9.5 GHz, and 15.5% to 26.5% at 12 GHz

　　Package: 10-pin metal/ceramic flanged package (25 mm × 9.9 mm)

　　Typical Application Areas

　　The CMPA601C025F is suitable for high-frequency, high-power wireless systems, including:

　　Military Electronic Warfare (EW): Jamming systems and radar countermeasure equipment

　　Satellite Communication (SATCOM): Signal amplification in Ka-band applications

　　Test and Measurement: Driver amplifiers for broadband signal sources and network analyzers

　　Point-to-Point Wireless Communication: Microwave links and 5G millimeter-wave base station infrastructure

If you need to know more about and purchase CREE/Wolfspeed products, you can consult CORE customer service or fill out the RFQ.