Tunnel Diode Detectors 0.1–18GHz for Microstrip Assemblies

2026-06-16 10:15:05 CORE View times 3

Key Specifications

• Product Type: Tunnel / Back Diode Detector

• Frequency Range: 0.1–18 GHz

• Minimum Sensitivity: 550–1000 mV/mW

• Typical TSS: -48 to -51 dBm

• Maximum Flatness: ±0.3 dB to ±1.5 dB

• Typical VSWR: 1.5:1 to 4:1

• Maximum Input Power: +17 dBm or 50 mW

• Operating Temperature: -54°C to +100°C

• Typical Rise Time: Less than 5 ns

• Package Style: K or Z1

RFQ

　　Herotek tunnel (back) diode detectors are designed for broadband RF and microwave signal detection in stripline and microstrip assemblies. Covering frequency options from 0.1 GHz up to 18 GHz, this detector series provides compact drop-in integration, fast pulse detecting capability, low output resistance, and stable broadband response for demanding RF monitoring applications.

　　With typical rise time of less than 5 ns, low 1/f noise, and excellent temperature stability, these detectors are suitable for radar equipment, transmitter monitoring, RF power monitoring, signal monitoring, and other high-reliability microwave systems.

　　Typical Applications

　　• Radar equipment

　　• Transmitter monitoring

　　• RF power monitoring

　　• RF and microwave signal monitoring

　　• Aerospace and defense RF systems

　　• High-speed pulse detection circuits

　　• Broadband microwave test and measurement systems

Model	Frequency Range	Min. Sensitivity	Typical TSS	Max. Flatness	Typical VSWR	Cap.	Res.	Package
DDT002	0.1–2.0 GHz	1000 mV/mW	-51 dBm	±0.3 dB	1.5:1	150 pF	250 Ω	K, Z1
DDT004	0.1–4.0 GHz	900 mV/mW	-50 dBm	±0.5 dB	2:01	150 pF	250 Ω	K, Z1
DT0105	0.1–0.5 GHz	1000 mV/mW	-51 dBm	±0.75 dB	2:01	150 pF	150 Ω	K
DT0110	0.1–1.0 GHz	800 mV/mW	-50 dBm	±0.75 dB	2:01	150 pF	130 Ω	K
DT0520	0.5–2.0 GHz	800 mV/mW	-50 dBm	±0.7 dB	3:01	50 pF	130 Ω	K
DT2060	2.0–6.0 GHz	800 mV/mW	-50 dBm	±0.7 dB	4:01	10 pF	130 Ω	K, Z1
DT2080	2.0–8.0 GHz	750 mV/mW	-50 dBm	±1.0 dB	4:01	10 pF	130 Ω	K, Z1
DT2012	2.0–12.0 GHz	700 mV/mW	-50 dBm	±1.2 dB	4:01	10 pF	130 Ω	K, Z1
DT6018	6.0–18.0 GHz	600 mV/mW	-49 dBm	±1.0 dB	3:01	10 pF	130 Ω	K, Z1
DT2018	2.0–18.0 GHz	600 mV/mW	-49 dBm	±1.5 dB	4:01	10 pF	130 Ω	K, Z1
DT1018	1.0–18.0 GHz	550 mV/mW	-48 dBm	±1.5 dB	4:01	20 pF	130 Ω	K, Z1

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