UMS CHA3092-99F（129pcs in stock） is a GaAs pHEMT single-chip four-stage high-power amplifier chip launched by the French United Monolithic Semiconductors (UMS). It is mainly targeted at the 20–33 GHz millimeter-wave frequency band.

　　Typical performance is as follows:

　　Small-signal gain: 22 dB (±1 dB flatness)

　　P1dB output power: approximately 20 dBm (0.1 W)

　　Third-order intermodulation point IP3: 29 dBm

　　Noise figure: ≈10 dB

　　DC bias: 3.5 V / 300–400 mA

　　Chip size: 0.88 × 1.72 × 0.10 mm

　　Operating temperature range: -40 °C to +85 °C

　　Built-in power detection (BIT) pad, which can be externally connected with a 10 kΩ resistor to output a DC voltage proportional to the RF power.

　　The device backside is uniformly grounded, facilitating sintering or conductive adhesive bonding; it adopts a 0.25 µm gate-length pHEMT process, achieving broadband matching through vias, air bridges, and electron beam lithography. 

　　Typical Applications

　　Satellite communication systems

　　Millimeter-wave radar and EW systems

　　5G / point-to-point microwave links

　　RF and microwave test & measurement equipment

CORE is authorized to distribute UMS microwaves. We offer high-quality stock of certain models of UMS products. Welcome to inquire.