The CLL3H0914LS-700U is a high-power RF (radio frequency) transistor from Ampleon, designed for use in L-band RF power amplifiers and similar high-frequency applications. It’s based on GaN-on-SiC HEMT technology, which provides high efficiency and rugged performance at microwave frequencies.

　　Key Specifications

　　Type: RF Power Transistor (GaN HEMT)

　　Frequency Range: ~0.9 GHz to 1.4 GHz (L-band)

　　Output Power: ~700 W RF power capability

　　Gain: ~17 dB

　　Drain Efficiency (ηD)：65% (typical), up to 71%

　　Supply/Test Voltage: 50 V

　　Package: SOT-502B chassis-mount style

　　Technology: GaN on SiC high-electron-mobility transistor

　　RDS(on)：35 mΩ

　　Input Return Loss：-10 dB (typical)

　　Typical Use Cases

　　This transistor is suited for high-power RF amplification in systems such as:

　　Radar transmitters (short and long pulse)

　　Avionics and defense communications

　　High-power L-band RF amplifiers

　　Where high efficiency, ruggedness and thermal performance are important.

　　Features & Benefits

　　Internally pre-matched GaN-SiC HEMT for easier amplifier integration.

　　Low thermal resistance and good efficiency at high power levels.

　　Designed for both short-pulse and long-pulse RF power applications.

Ampleon is a leading global provider of RF and power semiconductor solutions. CORE offer Ampleon’parts,If you need to know more about or purchase the product, you can consult CORE customer service or fill out the RFQ.