Home > technical > Ampleon CLF24H4LS300P | 300W 2.4GHz GaN RF Power Transistor for ISM Applications

Ampleon CLF24H4LS300P | 300W 2.4GHz GaN RF Power Transistor for ISM Applications

2026-02-02 10:27:46 CORE View times 128

  The Ampleon CLF24H4LS300P is a high-performance 300 W GaN-on-SiC HEMT (High Electron Mobility Transistor) RF power transistor designed for continuous wave (CW) applications in the 2.4–2.5 GHz ISM (Industrial, Scientific, Medical) band.

CLF24H4LS300P.png

  Key Specifications

ParameterValue
TechnologyGaN-on-SiC HEMT
Frequency Range2400 – 2500 MHz
Output Power300 W (nominal), 320 W CW typical, 350 W pulsed
Power Gain14 dB (typical)
Drain Efficiency74% (CW), 75% (pulsed)
Operating VoltageVDS = 50 V, VGS = -5 V
Max Drain-Source Voltage150 V
Thermal Resistance0.40 K/W (surface-to-case), 0.58 K/W (channel-to-case)
Max Channel Temperature225°C


  Typical Applications

  This device is optimized for solid-state RF power amplification in:

  ·Industrial heating and drying

  ·Microwave cooking and consumer ovens

  ·Scientific and medical RF equipment

  ·Plasma and RF processing systems

  ·ISM band power amplifiers

  Package & Ordering Information

Part NumberPackagePacking12NC Code
CLF24H4LS300PUSOT1214BTray, 20-fold9349 607 62112
CLF24H4LS300PJSOT1214BTR13 reel, 100-fold9349 607 62118

Ampleon is a leading global provider of RF and power semiconductor solutions. CORE offer Ampleon’parts,If you need to know more about or purchase the product, you can consult CORE customer service or fill out the RFQ.

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