Micron TLC NAND Flash Memory | High-Density 3D NAND for SSD & Embedded Storage
Micron TLC (Triple-Level Cell) NAND Flash is a high-density, cost-efficient non-volatile memory solution that stores three bits per cell, enabling greater storage capacity within a smaller footprint. Built on Micron’s advanced 3D NAND architecture, TLC NAND delivers an excellent balance of performance, reliability, and affordability for modern storage applications.
Micron’s TLC NAND products are widely used across consumer, enterprise, automotive, and embedded markets, supporting applications that require high capacity, fast data access, and optimized power efficiency.

| PART NUMBER | CAPACITY | COMPONENT DENSITY | I/O VOLTAGE | OPERATING TEMP | BUS WIDTH | COMPONENT CONFIG | NUMBER OF COMPONENTS | PART TYPE | WEB TECHNOLOGY | TECHNOLOGY | FAMILY |
| MT29F8T08EULCHD5-T:C | 8Tb | 8Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 1T x8 | 8 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F8T08EULCHD5-R:C | 8Tb | 8Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 1T x8 | 8 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F512G08EBLEEJ4-R:E | 512Gb | 512Gb | 1.2 VOLTS | 70°C | x8 | 64G x8 | 1 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F16T08EWLCHD6-R:C | 16Tb | 16Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 2T x8 | 16 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F512G08EBLEEJ4-T:E | 512Gb | 512Gb | 1.2 VOLTS | 70°C | x8 | 64G x8 | 1 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F16T08EWLCHD6-T:C | 16Tb | 16Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 2T x8 | 16 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F4T08EMLCHD4-T:C | 4Tb | 4Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 512G x8 | 4 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F1T08EELEEJ4-T:E | 1Tb | 1Tb | 1.2 VOLTS | 70°C | x8 | 128G x8 | 2 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F1T08EELEEJ4-R:E | 1Tb | 1Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 128G x8 | 2 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F256G08EBCCGB16E3WC1-M | 256Gb | 256Gb | 1.8 VOLTS | 70°C | x8 | 32G x8 | 1 | DIE | TLC | NAND FLASH | |
| MT29F1T08EBLCHD4-R:C | 1Tb | 1Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 128G x8 | 1 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F2T08EELEHD4-ITF:E | 2Tb | 2Tb | 1.2VOLTS | -40°C to +85°C | x8 | X8 | 2 | COMPONENT | TLC | NAND FLASH | |
| MT29F512G08EBHAFB17A3WC1-F | 512Gb | 512Gb | 1.8/1.2 VOLTS | 0°C to +70°C | x8 | 64G x8 | 1 | DIE | 3D NAND | TLC | NAND FLASH |
| MT29F256G08EBHBFB16C3WC1-F | 256Gb | 256Gb | 1.8/1.2 VOLTS | 0°C to +70°C | x8 | 32G x8 | 1 | DIE | TLC | NAND FLASH | |
| MT29F256G08EBHBFB16C3WC1-R | 256Gb | 256Gb | 1.8/1.2 VOLTS | 70°C | x8 | 32G x8 | 1 | DIE | TLC | NAND FLASH | |
| MT29F512G08EBHAFJ4-3ITF:A | 64GB | 64GB | 1.8/1.2 VOLTS | -40°C to +85°C | x8 | 64G x8 | 1 | COMPONENT | TLC | NAND FLASH | |
| MT29F4T08EULEEM4-T:E | 4Tb | 4Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 512G x8 | 8 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F4T08EULEEM4-R:E | 4Tb | 4Tb | 1.2 VOLTS | 70°C | x8 | 512G x8 | 8 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F512G08EBHBFB27A3WC1-R | 512Gb | 512Gb | 1.8/1.2 VOLTS | 0°C to +70°C | x8 | 64G x8 | 1 | DIE | 3D NAND | TLC | NAND FLASH |
| MT29F2T08EMLEEJ4-T:E | 2Tb | 2Tb | 1.2 VOLTS | 70°C | x8 | 256G x8 | 4 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F2T08EMLEEJ4-R:E | 2Tb | 2Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 256G x8 | 4 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F2T08EELCHD4-R:C | 2Tb | 2Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 256G x8 | 2 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F8T08EWLEEM5-R:E | 8Tb | 8Tb | 1.2 VOLTS | 70°C | x8 | 1T x8 | 16 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F8T08EWLEEM5-T:E | 8Tb | 8Tb | 1.2 VOLTS | 70°C | x8 | 1T x8 | 16 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F2T08EELCHD4-T:C | 2Tb | 2Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 256G x8 | 2 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F4T08EMLCHD4-R:C | 4Tb | 4Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 512G x8 | 4 | COMPONENT | 3D NAND | TLC | NAND FLASH |
| MT29F512G08EBLEEB47R3WC1-R | 512Gb | 512Gb | 1.2 VOLTS | 70°C | x8 | 64G x8 | 1 | DIE | 3D NAND | TLC | NAND FLASH |
| MT29F512G08EBLKEB47T3WC1-F | 512Gb | 512Gb | 1.2 VOLTS | 0°C to +70°C | x8 | 64G x8 | 1 | DIE | TLC | NAND FLASH | |
| MT29F1T08EBLCHD4-T:C | 1Tb | 1Tb | 1.2 VOLTS | 0°C to +70°C | x8 | 128G x8 | 1 | COMPONENT | 3D NAND | TLC | NAND FLASH |
Key Features and Benefits
·High Storage Density
By storing three bits per memory cell, Micron TLC NAND significantly increases data density, allowing manufacturers to design higher-capacity storage devices without increasing physical size.
·Advanced 3D NAND Technology
Micron leverages multi-layer 3D NAND structures to improve performance, endurance, and scalability compared with planar NAND, enabling consistent operation across multiple generations.
·High Performance
Optimized read and write speeds make Micron TLC NAND ideal for SSD, UFS, and embedded storage, delivering responsive system performance for data-intensive workloads.
·Power Efficiency
Designed with power-optimized architectures, Micron TLC NAND helps reduce energy consumption—especially critical for mobile devices and embedded systems.
·Proven Reliability
Enhanced error correction, data retention, and endurance technologies ensure reliable operation over extended lifecycles, including support for automotive and industrial environments.
Typical Applications
Client and Enterprise SSDs (NVMe / SATA)
Mobile Storage (UFS-based smartphones and tablets)
Embedded Systems and IoT Devices
Automotive Infotainment and ADAS Storage
Data Center and Cloud Storage Solutions
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