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Micron TLC NAND Flash Memory | High-Density 3D NAND for SSD & Embedded Storage

2026-02-06 09:20:54 CORE View times 112

  Micron TLC (Triple-Level Cell) NAND Flash is a high-density, cost-efficient non-volatile memory solution that stores three bits per cell, enabling greater storage capacity within a smaller footprint. Built on Micron’s advanced 3D NAND architecture, TLC NAND delivers an excellent balance of performance, reliability, and affordability for modern storage applications.

  Micron’s TLC NAND products are widely used across consumer, enterprise, automotive, and embedded markets, supporting applications that require high capacity, fast data access, and optimized power efficiency.

Micron TLC NAND Flash Memory

PART NUMBERCAPACITYCOMPONENT DENSITYI/O VOLTAGEOPERATING TEMPBUS WIDTHCOMPONENT CONFIGNUMBER OF COMPONENTSPART TYPEWEB TECHNOLOGYTECHNOLOGYFAMILY
MT29F8T08EULCHD5-T:C8Tb8Tb1.2 VOLTS0°C to +70°Cx81T x88COMPONENT3D NANDTLCNAND FLASH
MT29F8T08EULCHD5-R:C8Tb8Tb1.2 VOLTS0°C to +70°Cx81T x88COMPONENT3D NANDTLCNAND FLASH
MT29F512G08EBLEEJ4-R:E512Gb512Gb1.2 VOLTS70°Cx864G x81COMPONENT3D NANDTLCNAND FLASH
MT29F16T08EWLCHD6-R:C16Tb16Tb1.2 VOLTS0°C to +70°Cx82T x816COMPONENT3D NANDTLCNAND FLASH
MT29F512G08EBLEEJ4-T:E512Gb512Gb1.2 VOLTS70°Cx864G x81COMPONENT3D NANDTLCNAND FLASH
MT29F16T08EWLCHD6-T:C16Tb16Tb1.2 VOLTS0°C to +70°Cx82T x816COMPONENT3D NANDTLCNAND FLASH
MT29F4T08EMLCHD4-T:C4Tb4Tb1.2 VOLTS0°C to +70°Cx8512G x84COMPONENT3D NANDTLCNAND FLASH
MT29F1T08EELEEJ4-T:E1Tb1Tb1.2 VOLTS70°Cx8128G x82COMPONENT3D NANDTLCNAND FLASH
MT29F1T08EELEEJ4-R:E1Tb1Tb1.2 VOLTS0°C to +70°Cx8128G x82COMPONENT3D NANDTLCNAND FLASH
MT29F256G08EBCCGB16E3WC1-M256Gb256Gb1.8 VOLTS70°Cx832G x81DIE
TLCNAND FLASH
MT29F1T08EBLCHD4-R:C1Tb1Tb1.2 VOLTS0°C to +70°Cx8128G x81COMPONENT3D NANDTLCNAND FLASH
MT29F2T08EELEHD4-ITF:E2Tb2Tb1.2VOLTS-40°C to +85°Cx8X82COMPONENT
TLCNAND FLASH
MT29F512G08EBHAFB17A3WC1-F512Gb512Gb1.8/1.2 VOLTS0°C to +70°Cx864G x81DIE3D NANDTLCNAND FLASH
MT29F256G08EBHBFB16C3WC1-F256Gb256Gb1.8/1.2 VOLTS0°C to +70°Cx832G x81DIE
TLCNAND FLASH
MT29F256G08EBHBFB16C3WC1-R256Gb256Gb1.8/1.2 VOLTS70°Cx832G x81DIE
TLCNAND FLASH
MT29F512G08EBHAFJ4-3ITF:A64GB64GB1.8/1.2 VOLTS-40°C to +85°Cx864G x81COMPONENT
TLCNAND FLASH
MT29F4T08EULEEM4-T:E4Tb4Tb1.2 VOLTS0°C to +70°Cx8512G x88COMPONENT3D NANDTLCNAND FLASH
MT29F4T08EULEEM4-R:E4Tb4Tb1.2 VOLTS70°Cx8512G x88COMPONENT3D NANDTLCNAND FLASH
MT29F512G08EBHBFB27A3WC1-R512Gb512Gb1.8/1.2 VOLTS0°C to +70°Cx864G x81DIE3D NANDTLCNAND FLASH
MT29F2T08EMLEEJ4-T:E2Tb2Tb1.2 VOLTS70°Cx8256G x84COMPONENT3D NANDTLCNAND FLASH
MT29F2T08EMLEEJ4-R:E2Tb2Tb1.2 VOLTS0°C to +70°Cx8256G x84COMPONENT3D NANDTLCNAND FLASH
MT29F2T08EELCHD4-R:C2Tb2Tb1.2 VOLTS0°C to +70°Cx8256G x82COMPONENT3D NANDTLCNAND FLASH
MT29F8T08EWLEEM5-R:E8Tb8Tb1.2 VOLTS70°Cx81T x816COMPONENT3D NANDTLCNAND FLASH
MT29F8T08EWLEEM5-T:E8Tb8Tb1.2 VOLTS70°Cx81T x816COMPONENT3D NANDTLCNAND FLASH
MT29F2T08EELCHD4-T:C2Tb2Tb1.2 VOLTS0°C to +70°Cx8256G x82COMPONENT3D NANDTLCNAND FLASH
MT29F4T08EMLCHD4-R:C4Tb4Tb1.2 VOLTS0°C to +70°Cx8512G x84COMPONENT3D NANDTLCNAND FLASH
MT29F512G08EBLEEB47R3WC1-R512Gb512Gb1.2 VOLTS70°Cx864G x81DIE3D NANDTLCNAND FLASH
MT29F512G08EBLKEB47T3WC1-F512Gb512Gb1.2 VOLTS0°C to +70°Cx864G x81DIE
TLCNAND FLASH
MT29F1T08EBLCHD4-T:C1Tb1Tb1.2 VOLTS0°C to +70°Cx8128G x81COMPONENT3D NANDTLCNAND FLASH

  Key Features and Benefits

  ·High Storage Density

  By storing three bits per memory cell, Micron TLC NAND significantly increases data density, allowing manufacturers to design higher-capacity storage devices without increasing physical size.

  ·Advanced 3D NAND Technology

  Micron leverages multi-layer 3D NAND structures to improve performance, endurance, and scalability compared with planar NAND, enabling consistent operation across multiple generations.

  ·High Performance

  Optimized read and write speeds make Micron TLC NAND ideal for SSD, UFS, and embedded storage, delivering responsive system performance for data-intensive workloads.

  ·Power Efficiency

  Designed with power-optimized architectures, Micron TLC NAND helps reduce energy consumption—especially critical for mobile devices and embedded systems.

  ·Proven Reliability

  Enhanced error correction, data retention, and endurance technologies ensure reliable operation over extended lifecycles, including support for automotive and industrial environments.

  Typical Applications

  Client and Enterprise SSDs (NVMe / SATA)

  Mobile Storage (UFS-based smartphones and tablets)

  Embedded Systems and IoT Devices

  Automotive Infotainment and ADAS Storage

  Data Center and Cloud Storage Solutions

CORE offer Micron'products,If you need to know more about and purchase Micron products, you can consult CORE customer service or fill out the RFQ.

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