CG2H40045 GaN HEMT RF Power Transistor | 45W 4GHz CREE/Wolfspeed
The CG2H40045 is a high-performance Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for demanding RF power amplification applications. Originally developed by CREE (now part of Wolfspeed, distributed through MACOM), this second-generation 28V GaN-on-SiC device delivers exceptional power density and efficiency across a broad frequency range.
Key Specifications
| Parameter | Specification |
| Frequency Range | DC to 4 GHz |
| Output Power (PSAT) | 55W (Typical) / 45W (Rated) |
| Small-Signal Gain | 18 dB @ 2.0 GHz / 14 dB @ 4.0 GHz |
| Drain Efficiency | 60% @ PSAT |
| Operating Voltage | 28V |
| Technology | 0.25μm GaN-on-SiC HEMT |
| Thermal Resistance | 0.83°C/W (Junction-to-Case) |
Available Package Options
| Part Number | Package Type | Mounting Method |
| CG2H40045F | Flange Package | Screw-mount |
| CG2H40045P | Pill Package | Solder-mount |
| CG2H40045F-AMP | Amplifier Evaluation Kit | Test fixture included |
Primary Applications
Two-Way Private Radio Systems — High-reliability communication infrastructure
Cellular Base Stations — 4G/LTE infrastructure power amplification
Broadband Power Amplifiers — General purpose RF amplification
Test & Measurement Equipment — Lab-grade signal generation
Linear Amplifiers — Class A/AB operation for OFDM, W-CDMA, EDGE, CDMA waveforms
Related Products & Alternatives
| Part Number | Frequency | Power | Notes |
| CG2H80045D-GP4 | DC-8 GHz | 45W | Higher frequency, bare die |
| CG2H40010 | DC-4 GHz | 10W | Lower power variant |
| CGH40025 | DC-6 GHz | 25W | Alternative frequency range |
If you need to know more about and purchase CREE/Wolfspeed products, you can consult CORE customer service or fill out the RFQ.
