The CHA6005-99F is a high-performance X-Band MMIC power amplifier designed by United Monolithic Semiconductors (UMS). Built using advanced GaAs pHEMT technology, this amplifier delivers high output power, excellent efficiency, and stable gain across the 8–12 GHz frequency range, making it suitable for demanding microwave and RF systems.

　　The device is supplied as a bare die (chip) and is commonly integrated into modules used in radar systems, satellite communications, microwave links, and aerospace electronics.

　　Key Features

　　Frequency Range: 8 – 12 GHz (X-Band)

　　Saturated Output Power: Up to 32.5 dBm

　　Output Power at 1 dB Compression: 31.5 dBm

　　Small Signal Gain: Typically 20 – 22 dB

　　Power Added Efficiency (PAE): Up to 38%

　　Technology: GaAs pHEMT

　　Supply Voltage: 8 V

　　Package: Bare Die / Chip

　　Drain Current:350 mA

　　Chip size: 3.0 × 1.5 × 0.1 mm

　　The amplifier provides high gain and efficient power amplification, enabling reliable performance in X-Band RF signal chains.

　　Typical Applications

　　The CHA6005-99F is widely used in:

　　X-Band Radar Systems

　　Satellite Communication (SATCOM)

　　Microwave Point-to-Point Links

　　Aerospace and Defense Electronics

　　RF Test and Measurement Equipment

　　Its high output power and wideband performance make it ideal for systems requiring robust microwave amplification.

CORE is authorized to distribute UMS microwaves. We offer high-quality stock of certain models of UMS products. Welcome to inquire.