The CGHV40030 from Wolfspeed (formerly CREE) is a high-performance GaN HEMT RF power transistor designed for high efficiency, high gain, and wideband applications.

　　Built on advanced Gallium Nitride (GaN) technology, the CGHV40030 operates across a wide frequency range from DC to 6 GHz, making it an ideal solution for L-band, S-band, and C-band power amplifier designs.

　　This device is optimized for 50V operation, delivering superior power density and efficiency compared to traditional LDMOS solutions.

　　Key Specifications

　　Available Models & Evaluation Boards

　　To accelerate RF design and testing, the following variants are available:

　　CGHV40030F – Flanged package

　　CGHV40030P – Pill package

　　CGHV40030F-AMP – 0.96–1.4 GHz evaluation board

　　CGHV40030F-AMP2 – 0.5–2.7 GHz broadband evaluation board

　　These solutions support simulation tools such as ADS and Microwave Office, helping engineers reduce development time.

　　Applications

　　The CREE CGHV40030 is widely used in:

　　· Wireless communication base stations

　　· Radar systems (L / S / C band)

　　· Broadband RF power amplifiers

　　· Satellite communication systems

　　· Test and measurement equipment

　　· Electronic warfare systems

If you are searching for:

CREE CGHV40030 transistor

30W GaN RF power transistor

6GHz RF amplifier device

High efficiency GaN HEMT

This model is one of the most popular and widely used RF power transistors in the market.

If you need to know more about and purchase CREE/Wolfspeed products, you can consult CORE customer service or fill out the RFQ.