Ampleon RF Power Transistors for Radar | LDMOS & GaN L/S/C Band Solutions
Ampleon Radar RF Power Transistors (LDMOS & GaN Solutions)
Ampleon is a global leader in RF power semiconductor technology, delivering high-performance LDMOS and GaN transistors for demanding applications such as radar systems, wireless infrastructure, and industrial RF energy.
For pulsed radar applications, Ampleon provides a comprehensive portfolio of high-power RF transistors covering L Band, S Band, and C Band frequencies, designed to meet the requirements of modern radar systems including high efficiency, ruggedness, and long-term reliability.
Frequency Coverage for Radar Applications
Ampleon radar transistors are optimized for the following frequency ranges:
L Band (1 – 2 GHz)
Ideal for long-range radar systems and air surveillance
S Band (2 – 4 GHz)
Widely used in weather radar, marine radar, and tracking systems
C Band (4 – 8 GHz)
Suitable for high-resolution radar and advanced detection systems
These devices support pulsed operation and are engineered for stable performance under high peak power conditions.
Models
| Type Number | Description | Package | Fmin(Mhz) | Fmax(Mhz) | PL1db(W) | PL1db(dBm) | Vds(V) | Nd(%) | Gp(dB) |
| CLS3H3135L-700 | Long pulse S-band GaN-SiC HEMT | SOT502A | 3100 | 3500 | 700.0 | 58.5 | 50.0 | 57.0 | 13.2 |
| CLS3H3135LS-700 | Long pulse S-band GaN-SiC HEMT | SOT502B | 3100 | 3500 | 700.0 | 58.5 | 50.0 | 57.0 | 13.2 |
| CLS3H2731L-700 | Long pulse S-band GaN-SiC HEMT | SOT502A | 2700 | 3100 | 700.0 | 58.5 | 50.0 | 54.0 | 13.0 |
| CLS3H2731LS-700 | Long pulse S-band GaN-SiC HEMT | SOT502B | 2700 | 3100 | 700.0 | 58.5 | 50.0 | 54.0 | 13.0 |
| CLL3H0914L-700 | L-band internally pre-matched GaN-SiC HEMT | SOT502A | 900 | 1400 | 750.0 | 58.8 | 50.0 | 65.0 | 17.0 |
| CLL3H0914LS-700 | L-band internally pre-matched GaN-SiC HEMT | SOT502B | 900 | 1400 | 750.0 | 58.8 | 50.0 | 65.0 | 17.0 |
| BLS9G3135L-115 | LDMOS S-band radar power transistor | SOT1135A | 3100 | 3500 | 115.0 | 50.6 | 32.0 | 49.0 | 14.0 |
| BLS9G3135LS-115 | LDMOS S-band radar power transistor | SOT1135B | 3100 | 3500 | 115.0 | 50.6 | 32.0 | 49.0 | 14.0 |
| BLP0427M9S20 | Power LDMOS transistor | TO-270-2F-1 | 10 | 2700 | 20.0 | 43.0 | 28.0 | 63.0 | 19.0 |
| BLP0427M9S20G | Power LDMOS transistor | TO-270-2G-1 | 10 | 2700 | 20.0 | 43.0 | 28.0 | 63.0 | 19.0 |
| BLL9G1214L-600 | LDMOS L-band radar power transistor | SOT502A | 1200 | 1400 | 600.0 | 57.8 | 32.0 | 60.0 | 19.0 |
| BLL9G1214LS-600 | LDMOS L-band radar power transistor | SOT502B | 1200 | 1400 | 600.0 | 57.8 | 32.0 | 60.0 | 19.0 |
| BLS9G2735L-50 | LDMOS S-band radar power transistor | SOT1135A | 2700 | 3500 | 45.0 | 46.5 | 32.0 | 48.0 | 12.0 |
| BLS9G2735LS-50 | LDMOS S-band radar power transistor | SOT1135B | 2700 | 3500 | 45.0 | 46.5 | 32.0 | 48.0 | 12.0 |
| BLS9G2729L-350 | LDMOS S-band radar power transistor | SOT502A | 2700 | 2900 | 350.0 | 55.4 | 28.0 | 50.0 | 14.0 |
| BLS9G2729LS-350 | LDMOS S-band radar power transistor | SOT502B | 2700 | 2900 | 350.0 | 55.4 | 28.0 | 50.0 | 14.0 |
| BLS9G2731L-400 | LDMOS S-band radar power transistor | SOT502A | 2700 | 3100 | 400.0 | 56.0 | 32.0 | 47.0 | 13.0 |
| BLS9G2731LS-400 | LDMOS S-band radar power transistor | SOT502B | 2700 | 3100 | 400.0 | 56.0 | 32.0 | 47.0 | 13.0 |
| BLS9G2934L-400 | LDMOS S-band radar power transistor | SOT502A | 2900 | 3400 | 400.0 | 56.0 | 32.0 | 43.0 | 12.0 |
| BLS9G2934LS-400 | LDMOS S-band radar power transistor | SOT502B | 2900 | 3400 | 400.0 | 56.0 | 32.0 | 43.0 | 12.0 |
| BLS9G3135L-400 | LDMOS S-band radar power transistor | SOT502A | 3100 | 3500 | 400.0 | 56.0 | 32.0 | 43.0 | 12.0 |
| BLS9G3135LS-400 | LDMOS S-band radar power transistor | SOT502B | 3100 | 3500 | 400.0 | 56.0 | 32.0 | 43.0 | 12.0 |
Key Features and Advantages
✔ High Output Power
Supports applications ranging from 100W to 500W+ RF output
✔ High Efficiency
Typical efficiency up to 50%, reducing system power consumption
✔ Excellent Ruggedness
Designed to withstand load mismatch and harsh operating conditions
✔ Wideband Performance
Covers multiple radar frequency bands with fewer design constraints
✔ Internally Matched Devices
Simplifies RF design and reduces development time
✔ Reliable Thermal Performance
Ensures stable operation in high-power radar environments
Typical Radar Applications
Ampleon RF power transistors are widely used in:
·Airborne radar systems
·Weather radar systems
·Marine navigation radar
·Military surveillance radar
·Industrial and security detection systems
Ampleon is a leading global provider of RF and power semiconductor solutions. CORE offer Ampleon’parts,If you need to know more about or purchase the product, you can consult CORE customer service or fill out the RFQ.
