CREE CG2H40010F GaN HEMT RF Power Transistor | 10W High-Efficiency Microwave Amplifier
The CG2H40010F is a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) manufactured by Wolfspeed (formerly Cree). It is an unmatched RF power transistor designed for high-efficiency, high-power amplification in microwave and radio frequency applications.
Key Specifications
| Parameter | Typical Value |
| Technology | GaN on SiC HEMT |
| Frequency Range | DC – 8 GHz |
| Saturated Output Power (P<sub>) | 17 W (typical) / 10 W (nominal) |
| Small Signal Gain | 18 dB @ 2.0 GHz / 16 dB @ 4.0 GHz |
| Drain Efficiency | 70% @ P<sub> |
| Operating Voltage | 28 V |
| Package | 440166 Flange (Solderable) |
Absolute Maximum Ratings
| Parameter | Rating | Unit |
| Drain-Source Voltage (V<sub>) | 120 | V |
| Gate-Source Voltage (V<sub>) | -10 to +2 | V |
| Maximum Drain Current (I<sub>) | 1.5 | A |
| Maximum Gate Current (I<sub>) | 4 | mA |
| Junction Temperature (T<sub>) | 225 | °C |
| Thermal Resistance (R<sub>) | 7.83 | °C/W |
Package Options
CG2H40010F: Flange package with solder die attach (440166)
CG2H40010P: Flange package with screw-down option (440196)
CG2H40010F-AMP: Evaluation board with pre-tuned design for 10 W saturated output power
Typical Applications
Two-way private radios
Broadband amplifiers
Cellular infrastructure (4G/5G base stations)
Test and measurement equipment
Linear power amplifiers (Class A/AB) supporting OFDM, W-CDMA, EDGE, and CDMA waveforms
If you need to know more about and purchase CREE/Wolfspeed products, you can consult CORE customer service or fill out the RFQ.
