Home > technical > Onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET with 0.64mΩ RDS(on)

Onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET with 0.64mΩ RDS(on)

2026-02-04 09:32:35 CORE View times 1

  The NVBYST0D6N08X is a high-performance N-Channel Power MOSFET manufactured by onsemi (formerly ON Semiconductor). Designed in a TCPAK1012 (TopCool) package (CASE 762AA), this automotive-grade device delivers exceptional power handling with ultra-low on-resistance for demanding power conversion applications.

Onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET

  Key Specifications

ParameterSpecification
Drain-Source Voltage (VDS)80V
On-Resistance (RDS(on))0.64 mΩ (typical)
Continuous Drain Current (ID)767A
Gate DriveStandard Gate (STD Gate)
PackageTCPAK1012 (TopCool)


  Features

  Low QRR with Soft Recovery Body Diode – minimizes switching losses and EMI

  Ultra-Low RDS(on) – only 0.64 mΩ to minimize conduction losses

  Low QG and Capacitance – reduces gate driver losses for higher efficiency

  AEC-Q101 Qualified & PPAP Capable – meets automotive reliability standards

  RoHS Compliant – Lead-free, Halogen-free, and BFR-free

  Applications

  Synchronous Rectification (SR) in DC-DC and AC-DC converters

  Primary Switch in isolated DC-DC converters

  Motor Drive applications

  Automotive 48V Systems (mild hybrid and other 48V architectures)

  Package Advantages

  TCPAK1012 (TopCool) Package (CASE 762AA):

  Top-side cooling design for superior thermal management

  Compact dimensions: 8.80mm × 10.10mm × 1.20mm

  Optimized for high-power density designs with demanding thermal requirements

 CORE Advantage offers Onsemi's MOSFETs, AC-DC/DC-DC power converter modules and silicon carbide (SiC) products. Welcome to inquire and learn more.

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