SK hynix HBM3E is a next-generation high-performance memory product from SK hynix, designed primarily for AI accelerators, high-performance computing (HPC), and data-intensive workloads. It belongs to the High Bandwidth Memory (HBM) family — vertically stacked DRAM that provides extremely high data throughput compared to conventional DRAM.

　　What is HBM3E?

　　HBM3E stands for High Bandwidth Memory 3 Extended — an enhanced extension of the HBM3 generation with higher performance and efficiency.

　　It’s the fifth generation of HBM technology, following HBM, HBM2, HBM2E, and HBM3.

　　Key Features

　　·Ultra-High Bandwidth

　　HBM3E delivers very high data transfer speeds — typically around 1.15 TB/s (terabytes per second) per stack, enabling massive throughput for AI and HPC tasks such as training large models or processing extensive datasets.

　　·Vertical Stacking

　　Uses vertically stacked DRAM dies connected through through-silicon vias (TSVs), maximizing memory density while maintaining a small footprint.

　　·Improved Thermal Performance

　　Implements Advanced MR-MUF technology, which enhances heat dissipation by ~10 % compared to earlier HBM3. This is critical for stable operation at high speeds.

　　·Backward Compatibility

　　Designed to be backward compatible with HBM3 systems, so it can be used in many existing designs without major redesign.

　　Capacity & Production

　　SK hynix has launched 12-layer HBM3E modules with up to 36 GB per stack, the largest capacity available at the time of their release.

　　The company is also developing 16-layer versions with capacities up to 48 GB per stack, aimed at boosting both training and inference performance.

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