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C5H3337N110D RF power transistor

2026-01-28 16:59:13 CORE View times 70
C5H3337N110D RF power transistor

Mfr.Part #:C5H3337N110D

ManufacturerAmpleon

Package/Case:8 mm × 8 mm QFN surface-mount package

Description:GaN (Gallium Nitride) RF Doherty power transistor



RFQ
ParameterSpecification
Technology5th Generation GaN-on-SiC HEMT
Frequency Range3300 – 3700 MHz (3.3–3.7 GHz)
Output Power110W at 5 dB gain compression
Power Gain15 dB (typical), 13.4 dB (minimum)
Drain Efficiency49.5% – 57%
Supply Voltage50V (typical)
PackageQFN-8x8 (8mm × 8mm), 20-pin
ConfigurationDoherty (Carrier + Peaking amplifiers)


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