BLF13H9L750P 750W RF LDMOS Transistor
| Parameter | Specification |
| Frequency Range | 1.3 GHz |
| Output Power | 750 W @ 1 dB gain compression |
| Operating Voltage | 50 V (VDS) |
| Power Gain (Gp) | 19 dB (typical) / ≥16.6 dB (minimum) |
| Drain Efficiency (ηD) | 62% (typical) / ≥55% (minimum) |
| Input Return Loss | -10 dB |
| Package | SOT539A (flanged bolt-down) |
| Alternative Package | BLF13H9LS750P (SOT539B with earless flange) |



